PART |
Description |
Maker |
MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits (MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] http:// Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
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VCC1-103 VCC1-105 |
(VCC1-103 / -105) Crystal Oscillators
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VECTRON
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1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE SWITCHING DIODE
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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AS8S128K32Q1-35_883C AS8S128K32Q1-35_IT AS8S128K32 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 0.140 INCH HEIGHT, CERAMIC, QFP-68
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http:// Austin Semiconductor, Inc
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SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
SDCFJ-2048-388 SDCFJ-XXXX-388 |
(SDCFJ-xxxx-388) Compact Flash Memory Card
|
Sandisk
|
AK5328192WP-60 |
8,388,608 by 32 Bit CMOS Dynamic Random Access Memory
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http:// ACCUTEK MICROCIRCUIT CORPORATION
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MH8S72BBFD-8 B98047_A MH8S72BBFD-7 |
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM From old datasheet system 603 /979 /776-BIT ( 8 /388 /608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MK32VT832-10YC MK32VT832 |
8,388,608 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
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OKI[OKI electronic componets]
|
MSC23841D-XXDS20 MSC23841D-XXBS20 |
8,388,608-word x 40-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
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OKI
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MSC23836AA MSC23836AA-XXBS20 MSC23836AA-XXDS20 |
8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE SSR AS 600V 100A 0-10V
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
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EC1125-16.388M |
OSCILLATORS 25PPM 0 70 5.0V 4 16.388MHZ NC CMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 16.388 MHz, HCMOS/TTL OUTPUT
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Ecliptek, Corp.
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